Coupling wire to semiconductor region

ABSTRACT

A first device has a surface and includes a micrometer-scale or smaller geometry doped semiconductor region extending along the surface. A second device has a surface opposite the surface of the first device and includes a micrometer-scale or smaller wire extending through the second device to a position in proximity to the surface of the second device. The first and second devices are displaceable between first and second positions relative to each other. The wire is not substantially electrically coupled to the doped semiconductor region in the first position and the wire is substantially electrically coupled to the doped semiconductor region in the second position. A potential applied to the wire affects the conductivity of the doped semiconductor region in the second position.

CROSS REFERENCE

This application is related to the following United States patentapplications which are filed on even date herewith and which areincorporated herein by reference:

Ser. No. 10/______ (Attorney Docket No.: 200315557-1/196843) entitledSYSTEMS AND METHODS FOR RECTIFYING AND DETECTING SIGNALS;

Ser. No. 10/______ (Attorney Docket No.: 200315559-1/196845) entitledSYSTEMS AND METHODS FOR ELECTRICALLY COUPLING WIRES AND CONDUCTORS; and

Ser. No. 10/______ (Attorney Docket No.: 200406357-1/200272) entitledMETHODS AND SYSTEMS FOR ALIGNING AND COUPLING DEVICES.

BACKGROUND

Integrated circuits have dominated the electronics industry for manyyears. Some applications require the use of multiple integrated circuitsin combination. Signals between these multiple integrated circuits areconnected in order for them to perform their intended function.

Wire bonding is one method for connecting signals between integratedcircuits. Each integrated circuit may include a wire bonding pad. Anelectrical interconnection between the integrated circuits is made byconnecting a thin wire between the wire bonding pads. As the size ofintegrated circuits decreases, the space used for wire bondingtechniques, such as for the bonding pads and the fan-out structures tobring signals to the bonding pads, becomes a larger proportion of entireintegrated circuit surface.

SUMMARY

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an extensive overview of the invention. It is intended toneither identify key or critical elements of the invention nor delineatethe scope of the invention. Its sole purpose is to present some generalconcepts of the invention in a simplified form as a prelude to the moredetailed description that is presented later.

In one embodiment, the invention encompasses a system having a firstdevice and a second device. The first device has a surface and includesa micrometer-scale or smaller geometry doped semiconductor regionextending along the surface. The second device has a surface oppositethe surface of the first device and includes a micrometer-scale orsmaller wire extending through the second device to a position inproximity to the surface of the second device. The first and seconddevices are displaceable between first and second positions relative toeach other. The wire is not substantially electrically coupled to thedoped semiconductor region in the first position and the wire issubstantially electrically coupled to the doped semiconductor region inthe second position. A potential applied to the wire affects theconductivity of the doped semiconductor region in the second position.

In another embodiment, the invention encompasses a system including afirst device and a plurality of wire devices. The first device has asurface and includes a plurality of micrometer-scale or smaller geometrydoped semiconductor regions extending along the surface of the firstdevice. The wire devices each have a surface opposite the surface of thefirst device and each include a micrometer-scale or smaller wireextending through the respective wire device to at least one position inproximity to the surface of the respective wire device. Each of the wiredevices is displaceable between respective first and second positionsrelative to the first device and its respective wire is substantiallyelectrically coupled to a respective group of the plurality of dopedsemiconductor regions in the second position and is not substantiallyelectrically coupled to the respective group of doped semiconductorregions in the first position. A potential applied to the wire of one ofthe plurality of wire devices affects the conductivity of its respectivegroup of the plurality of doped semiconductor regions in the secondposition.

In another embodiment, the invention encompasses a method forsubstantially electrically coupling a micrometer-scale or smallergeometry doped semiconductor region to a micrometer-scale or smallergeometry wire. A first device has a surface and includes the dopedsemiconductor region extending along its surface. A second device has asurface opposite the surface of the first device and includes the wireextending through the second device to a position in proximity to thesurface of the second device. One of the first and second devices isdisplaced relative to the other device. A signal is received from asensor, the signal indicating the relative position of the wire and thedoped semiconductor region. The alignment of the first and second wiresis determined in response to the signal.

In yet another embodiment, the invention encompasses a method forsubstantially electrically coupling a micrometer-scale or smallergeometry wire to a micrometer-scale or smaller geometry dopedsemiconductor region. A first device has a surface and includes theplurality of doped semiconductor regions extending along its surface. Asecond device has a surface opposite the surface of the first device andincludes the wire extending through the second device to a position inproximity to the surface of the second device. A signal identifying oneof the doped semiconductor regions is received. Position informationcorresponding to the identified doped semiconductor region is read frommemory. One of the first and second devices is displaced in response tothe position information.

In another embodiment, the invention comprises a method of substantiallyelectrically coupling a micrometer-scale or smaller geometry wire to oneof a plurality of micrometer-scale or smaller geometry dopedsemiconductor regions. A first device has a surface and includes theplurality of doped semiconductor regions extending along its surface. Asecond device has a surface opposite the surface of the first device andincludes the wire extending through the second device to a position inproximity to the surface of the second device comprising. A signalidentifying one of the doped semiconductor regions is received. Positioninformation is read from memory, the position information correspondingto the identified doped semiconductor region. One of the first andsecond devices is displaced in response to the position information.

In another embodiment, the invention comprises a system having a firstdevice and a second device. The first device has a micrometer-scale orsmaller geometry doped semiconductor region. The second device has amicrometer-scale or smaller geometry signal conductor. An actuatordisplaces the first and second devices relative to each other betweenfirst and second positions such that the doped semiconductor region issubstantially conductive in the first position and not in the secondposition.

In another embodiment, the invention comprises a system having a firstdevice including micrometer-scale or smaller geometry dopedsemiconductor region. A second device includes a micrometer-scale orsmaller geometry first means for activating and deactivating the dopedsemiconductor region. A second means displaces the first and seconddevices relative to each other between first and second positions suchthat the doped semiconductor is activated in the first position anddeactivated in the second position.

In another embodiment, the invention comprises a method of activatingone of a plurality of micrometer-scale or smaller geometry dopedsemiconductor regions along a surface of a first device. A commandsignal is received, the command signal identifying the one of theplurality of doped semiconductor regions. A control signal is generatedin response to the command signal. A second device is actuated relativeto the first device in response to the control signal to align aconductor on the second device with the identified doped semiconductorregion.

BRIEF DESCRIPTION OF THE DRAWINGS

For the purpose of illustrating the invention, there is shown in thedrawings a form that is presently preferred; it being understood,however, that this invention is not limited to the precise arrangementsand instrumentalities shown.

FIGS. 1A-C are top views of a portion of a system according to anembodiment of the invention in a first position, second position, andthird position, respectively, according to an embodiment of theinvention;

FIGS. 2A-C are cross-sectional views of the system shown in FIGS. 1A-Ctaken along lines 2A-2A, 2B-2B, and 2C-2C, respectively, according to anembodiment of the invention;

FIGS. 3A and 3B are a cross-sectional views of the system shown in FIGS.2A and 2B, respectively, taken along line 3A-3A and line 3B-3B,respectively, according to an embodiment of the invention;

FIG. 4 is a cross-sectional view of the system shown in FIG. 2A takenalong line 4-4 according to an embodiment of the invention;

FIGS. 5A-D are cross-sectional views illustrating various positions ofwires relative to devices according to embodiments of the invention;

FIGS. 6A and 6B are top views of a system including multiple wires in adevice according to an embodiment of the invention;

FIGS. 7A and 7B are top views of a system including multiple devicesaccording to an embodiment of the invention;

FIG. 8 is a top view of a system including multiple doped semiconductorregions and multiple wire devices according to an embodiment of theinvention;

FIGS. 9A-C illustrate cross-sectional views of the system shown in FIG.8 along lines 9A-9A, 9B-9B and 9C-9C, respectively, according to anembodiment of the invention;

FIG. 10 is a top view of a system including multiple doped semiconductorregions and multiple wire devices according to an embodiment of theinvention;

FIG. 11 is a block diagram of a system according to an embodiment of theinvention;

FIGS. 12A and 12B are cross-sectional diagrams of a system according toan embodiment of the invention;

FIGS. 13-14 show flow charts illustrating methods according toembodiments of the invention;

FIG. 15 is an isometric view of a system according to an embodiment ofthe invention;

FIG. 16A-C are cross sectional view of the system in FIG. 15 taken alongline 16-16;

FIG. 17 is an isometric view of a system having a device flexiblycoupled to a substrate according to an embodiment of the invention;

FIG. 18A-D are cross sectional view of the system in FIG. 17 taken alongline 18-18;

FIGS. 19-20 are isometric views of systems having electrostaticactuators according to embodiments of the invention;

FIG. 21 is a cross-sectional diagram of a portion of the system in FIG.20 taken along line 21-21; and

FIG. 22 shows a flow chart illustrating a method according to anembodiment of the invention.

DETAILED DESCRIPTION

Referring to the drawings, in which like reference numerals indicatelike elements, there is shown in FIGS. 1A-C top views of a system 100according to an embodiment of the invention. The system 100 includes afirst device 102 and a second device 104. Structures (e.g., electroniccircuits, mechanical components) on or in the first and second devices102, 104 are manufactured using micrometer-scale or smaller technology.

The second device 104 is shown in a first position in FIG. 1A, in asecond position in FIG. 1B, and in a third position in FIG. 1C, relativeto the first device 102. FIGS. 2A-C are cross-sectional views of thesystem 100 taken along lines 2A-2A, 2B-2B and 2C-2C in FIGS. 1A-C,respectively. FIGS. 3A and 3B are cross-sectional views of the system100 taken along lines 3A-3A, 3B-3B in FIGS. 2A and 2B, respectively.FIG. 4 is a cross-sectional view of the system 100 shown in FIG. 2Ataken along line 4-4. The system 100 is described below with referenceto FIGS. 1-4.

In an embodiment of the invention, the structures in or on the first andsecond devices 102, 104 include a plurality of wires 106 that extendalong the surface 206 of the first device 102 and a wire 110 thatextends through the second device 104 and through the surface 208 of thesecond device 104. The wires 106, 110 are formed on the devices 102, 104at micrometer-scale or smaller geometries.

The second device 104 is displaceable between positions where the wire110 in the second device 104 is substantially electrically coupled toone of the plurality of wires 106 in the first device 102, as in thesecond and third positions shown in FIGS. 1B and 1C, respectively, andpositions where the wire 110 in the second device 104 is notsubstantially electrically coupled to any of the plurality of wires 106in the first device 102, as in the first position shown in FIG. 1A.According to embodiments of the invention, a wire or conductor may beelectrically coupled to another wire or conductor indirectly such as byinductive or capacitive coupling or by direct contact.

Embodiments of the invention encompass interconnecting structuresmanufactured using different types of manufacturing technologies. Forexample, the first and second devices 102, 104 may be manufactured usingdifferent manufacturing processes and using different materials.Embodiments of the invention encompass interconnecting structuresmanufactured using different micrometer or smaller scale geometryprocesses. In an embodiment of the invention, the structures on thefirst device 102 and the structures on the second device 104 aremanufactured using different micrometer or smaller scale geometryprocesses. In an embodiment of the invention, the wires 106 on the firstdevice 102 are nanometer-scale structures and the wire 110 on the seconddevice 104 is a micrometer scale structure.

The second device 104 is displaceable in a direction indicated by arrow108. Although the arrow 108 indicates a substantially linear direction,embodiments of the invention encompass non-linear displacement of thedevices 102, 104. Although the device 104 is shown as being displaceablein a direction perpendicular to the direction of the wires 106 on thefirst device 102, embodiments of the invention encompass a wire on onedevice being displaceable in a direction that is not perpendicular towires on another device and the wires 106 are not necessarily parallel.

The first device 102 has a surface 206 and the second device 104 has asurface 208 substantially opposite the surface 206 of the first device102. A plurality of wires 106 each extend along the surface 206 of thefirst device 102. The term “along the surface” encompasses embodimentswhere the wires 106 are within the device, are flush or substantiallyflush with the surface 206 of the device, and extend past the surface206 of the first device 102 (embodiments of the invention illustratingdifferent positions of wires along the surface of a device are laterdescribed with reference to FIGS. 5A-D).

In the first position of the second device 104 as shown in FIG. 1A, thewire 110 in the second device 104 is a distance D2 (see FIG. 2A)sufficiently away from all of the plurality of wires 106 in the firstdevice 102 so that it is not electrically coupled to one of theplurality of wires 106. In the embodiment of the invention shown in FIG.2A, the system 100 includes a ground plane 204. The ground plane 204facilitates electrically isolating the wire 110 in the second device 104from the wires 106 along the surface 206 of the first device 102 when inthe first position.

The wire 110 in the second device 104 extends through the surface of thedevice and through an opening in the ground plane 204 as illustrated inFIGS. 2A and 4. When the wire 110 in the first device 104 is positionedaway from the wires 106 in the first device 102, the wires 106 in thefirst device 102 are in proximity to the ground plane 204. The groundplane may inhibit signals in the wire 110 in the second device 104 frombeing coupled to wires 106 in the first device 102 when wire 110 is awayfrom the wires 106 in the first device 102. Although the term “ground”plane is used herein, embodiments of the invention encompass applying adirect current (DC) voltage to the conductive plane 204.

In the second position of the second device 104 as shown in FIG. 1B, thewire 110 in the second device 104 is sufficiently close to and inproximity to one of the plurality of wires 106B in the first device 102so that signals may be electrically coupled between the wire 110 on thesecond device 104 and the wire 106B on the first device 102. Similarly,in the third position of the second device 104 shown in FIG. 1C, thewire 110 in the second device 104 is positioned in proximity to one ofthe plurality of wires 106C in the first device 102 so that it iselectrically coupled to that wire 106C.

A system according to an embodiment of the invention may include aclamping or other mechanism to apply a force to bring the first andsecond devices 102, 104 toward each other. This force may be appliedwhen the wire 110 in the second device 104 is in proximity to one of thewires 106 in the first device 102 to enhance the electrical couplingbetween the wires 110, 106 by bringing them closer together.

The system 100 shown in FIGS. 2A-C includes a clamping mechanism thatapplies an electrostatic force to pull the first and second devices 102,104 together. The clamping mechanism shown in FIG. 2B includeselectrostatic clamping electrodes 202. A charge or potential may beapplied to the electrodes 202 and an opposite charge or potential may beapplied to the ground plane 204 to pull the two devices 102, 104together. In another embodiment, the second device 104 also includesclamping electrodes (as shown in FIGS. 9A and 9B) that are oppositelycharged and attracted to the clamping electrodes 202 on the first device102. Embodiments of the invention encompass electrostatic actuators forattracting devices together where an attractive force is generated byapplying a potential difference between the electrodes such as positiveand negative, positive and ground, negative and ground, or differentlevels of positive and positive or negative and negative potentials.

The wires 106 on the first device 102 and the wire 110 on the seconddevice 104 shown in FIGS. 1-3 extend beyond the surface 206, 208 oftheir respective devices 102, 104 by a distance such that the wires 106,110 connect to each other in the second and third positions as shown inFIGS. 2B and 2C, respectively. When the wires 106, 110 are connected toeach other, signals may be directly communicated between the wires 106,110. As described below with reference to FIGS. 5A-D, the wires 106,110, ground (or conductive) plane 204, and electrodes 202 may bepositioned within, at the surface of, or above the surface of theirrespective devices according to embodiments of the invention.

In FIG. 5A there is shown a plurality of wires 516 and electrodes 512that are substantially flush with the surface 506 of the first device502. The ground plane 514 and wire 510 extend past the surface 508 ofthe first device 504. When the first and second devices 502, 504 arebrought together, the wire 510 of the second device 504 contacts thewire 516B of the first device 502 and signals may be directlycommunicated or conducted between the wires 510, 516B.

In FIG. 5B there is shown a plurality of wires 516 and electrodes 512that extend past or through the surface 506 of the first device 502. Theconductive plane 514 and wire 510 extend to a position in proximity tobut not at the surface 508 of the first device 504. When the first andsecond devices 504 are pulled together, the wire 510 of the seconddevice 504 does not contact the wire 516B of the first device 502. Thewires 510, 516B are separated by a dielectric material 518. Although thewires 510, 516B in the first and second devices 102, 104 do not contacteach other in FIG. 5B, signals from one wire 510, 516B may still becoupled to the other wire. When the devices 502, 504 are broughttogether, alternating current (AC) signals may be coupled between thewires 510, 516B such as by capacitive or inductive coupling, forexample.

In FIG. 5C there is shown a plurality of wires 516 and electrodes 512that extend to a position in proximity to but not at the surface 506 ofthe first device 502. The ground plane 514 and wire 510 extend to aposition substantially flush with the surface 508 of the first device504. When the first and second devices 504 are pulled together, the wire510 of the second device 504 does not contact the wire 516B of the firstdevice 502 because the wire 516B is not at the surface of the firstdevice 502. The wires 510, 516B are separated by a dielectric material520. Although the wires 510, 516B are not connected in FIG. 5C, they arecapacitively coupled when the devices 502, 504 are brought together asin FIG. 5B and AC signals may be communicated between the wires 510,516B.

In FIG. 5D there is shown an embodiment of the invention similar to thatin FIG. 5C but with the wire 510 extending to a position past thesurface 508 of the first device 504. The wires 510, 516B in FIG. 5D arenot connected and are capacitively coupled when the devices 502, 504 arebrought together with a dielectric material 520 separating the wires510, 516B.

There is shown in FIGS. 6A and 6B top views of a system 600 according toan embodiment of the invention. The system 600 includes a first device602 and a second device 604. The second device 604 is displaceable in adirection indicated by arrow 608. The second device 604 is shown in afirst position in FIG. 6A and in a second position in FIG. 6B, relativeto the first device 602.

A plurality of wires 606 each extend along the surface of the firstdevice 602. A plurality of wires 610 extend through the second device604 and through the surface of the second device 604. With multiplewires 610 in the second device 604, each position of the second device604 allows multiple wires 610 from the second device 604 to beelectrically coupled to or electrically de-coupled from the wires 606 inthe first device 602. In addition, multiple wires 610 allow the seconddevice 604 to move a shorter distance and still electrically couple oneof the wires 610 to any one of the wires 606 of the first device 602.

In the first position shown in FIG. 6A, two of the wires 610A, 610C ofthe second device 604 are not electrically coupled to the wires 606 inthe first device 602 and another wire 610B is electrically coupled to awire 606E in the first device 602. In the second position shown in FIG.6B, the wires 610A, 610C of the second device 604 are electricallycoupled to several of the wires 606A, 606G in the first device 602 andthe wire 610B is not electrically coupled to a wire 606 in the firstdevice 602. Although the wires 610 of the second device 602 are shown asindependent and not connected to each other in the embodiment shown inFIGS. 6A and 6B, the wires 610 can be connected together according toanother embodiment of the invention.

There is shown in FIGS. 7A and 7B top views of a system 700 according toan embodiment of the invention. The system 700 includes a first device702, a second device 704A, a third device 704B, and a fourth device704C. The second, third, and fourth devices 704 are displaceable in adirection indicated by arrow 708, relative to the first device 702. Thesecond, third, and fourth devices 704 are each shown in a respectivefirst position in FIG. 7A and in a respective second position in FIG.7B, relative to the first device 702. Each of the second, third, andfourth devices 704A-C may be positioned independently to electricallycouple or de-couple its respective wire 710 A-C from a wire 706A-I ofthe first device 702.

With multiple devices each having a wire 710 as illustrated in FIGS. 7Aand 7B, a wire 710 may be electrically coupled to a wire on the firstdevice 702 with less displacement than with a single device with a wire710. For example, in FIG. 7B the wire 706H is electrically coupled tothe wire 710C on the fourth device 704C. From its first position in FIG.7A, the fourth device 704C was actuated a distance less than thedistance between two wires 706G and 706H. In comparison, with only thesecond device 704A (and not the third and fourth devices 704B, 704C),the second device 704A would be actuated more than the distance betweensix wires from 706B to 706H to couple to wire 706H. The shorterdisplacement distances allow for quicker transitions to connect to aparticular wire 706 on the first substrate 702.

Although embodiments of the invention are described above with referenceto alignment of wires on devices, embodiments of the invention alsoencompass devices with other forms of micrometer-scale or smaller signalconductors. Signal conductors encompass materials that convey signalsincluding transmitters and receivers of signals, including but notlimited to sound and electromagnetic signals. In an embodiment of theinvention, the structures on the devices to be aligned conduct opticalsignals. For example, an optical transmitter on one device may beselectively aligned with one of a plurality of optical receivers onanother device according to an embodiment of the invention.

Although described above with reference to coupling signals from a wireon one device to a wire on another device, embodiments of the inventionencompass coupling a wire on one device to a structure on another devicefor affecting the conductivity of the structure. There is shown in FIG.8 a system 800 including a plurality of doped depletion-typesemiconductor regions 806A-H according to an embodiment of theinvention. A plurality of wire devices 804A-F each include at least onewire 810. The wires 810A-F extend through their respective wire devices804A-F to at least one position in proximity to (e.g., within the wiredevice, substantially flush with the surface of the wire device, throughthe surface of the respective wire device) the surface of the respectivewire device. Each wire 810A-F may span and may be coupled to one or moreof the doped semiconductor regions 806A-H.

The wire 810A in wire device 804A extends through the wire device 804Ato a position in proximity to four doped semiconductor regions 806A-D asillustrated in FIGS. 8 and 9A. FIG. 9A is a cross-sectional diagram ofthe system 800 shown in FIG. 8 taken along line 9A-9A. The wire 810Aextends through the wire device 804A to a position in proximity to thesurface 808A of the wire device 804A, opposite the surface 806 of thedevice 802. The clamping electrodes 820, 822 may be attracted to eachother by applying opposite or different potentials to them to apply aforce to pull the two devices 804A, 802 together. When a negativevoltage is applied to the wire 810A, the four doped (e.g., depletiondoped) semiconductor regions 806A-D become substantially non-conductive.The ground plane 814A of device 804A reduces the affect of the wire 810Aon the four doped semiconductor regions 806E-H so their conductivity isnot substantially affected by wire 810A.

The wire 810E in wire device 804E extends through the wire device 804Eto a position in proximity to four doped semiconductor regions 806A,806C, 806E, and 806G as illustrated in FIG. 9B. FIG. 9B is across-sectional diagram of the system 800 shown in FIG. 8 taken alongline 9B-9B. The wire 810E extends through the wire device 804A tomultiple positions in proximity to the surface 808E of the wire device804E, opposite the surface 806 of the device 802. The clampingelectrodes 820, 822 may apply a force to pull the two devices 804E, 806together. When a negative voltage is applied to the wire 810E, the fourdoped (e.g., depletion doped) semiconductor regions 806A, 806C, 806E,and 806G become substantially non-conductive. The ground plane 814E ofdevice 804E reduces the affect of the wire 810A on the four dopedsemiconductor regions 806E-H so their conductivity is not substantiallyaffected by wire 810E.

The system 800 of FIG. 8 may be used as for binary-tree addressingaccording to an embodiment of the invention. Each wire 810 is driven byone of three control lines A0, A1, or A2 or by its inverse A0 , A1 , orA2 . With a zero or positive voltage (V≧0) applied to a wire 810, thedepletion-type semiconductor regions that are proximate to that wire 810are substantially conductive. With a negative voltage (V<0) applied to awire 810, the depletion-type semiconductor regions proximate to the wire810 are substantially non-conductive. The depletion-type semiconductorregion becomes less conductive the greater the negative potentialapplied to the wire 810. The output signals corresponding to each dopedsemiconductor region 806A-H are designated X0-7, respectively in FIG. 8.Table 1 below shows the output signals X0-7 for combinations of thecontrol signals A0-2 where an output signal having a value of “I”indicates that the respective doped semiconductor region is conductiveand the input signal I is transmitted to the corresponding output X0-7.Although shown as having a common input I, embodiments of the inventionencompass some and all of the doped semiconductor region 806A-H having aseparate input signal.

TABLE 1 Control Output Signals A₂ A₂ A₁ A₁ A₀ A₀ X0 X1 X2 X3 X4 X5 X6 X70 −V 0 −V 0 −V I 0 0 0 0 0 0 0 0 −V 0 −V −V 0 0 I 0 0 0 0 0 0 0 −V −V 00 −V 0 0 I 0 0 0 0 0 0 −V −V 0 −V 0 0 0 0 I 0 0 0 0 −V 0 0 −V 0 −V 0 0 00 I 0 0 0 −V 0 0 −V −V 0 0 0 0 0 0 I 0 0 −V 0 −V 0 0 −V 0 0 0 0 0 0 I 0−V 0 −V 0 −V 0 0 0 0 0 0 0 0 I

Embodiments of the invention are not limited to a particularsemiconductor material or doping thereof. In an embodiment of theinvention, the structure (e.g., 806A-H) is an enhancement-typesemiconductor region. A voltage applied to a wire (e.g., 810) on anotherdevice affects the conductivity of the enhancement-type semiconductorregion. With a zero or positive voltage (V≧0) applied to a wire (e.g.,810) the enhancement-type semiconductor regions that are proximate tothat wire (e.g., 810) are substantially non-conductive. With a negativevoltage (V<0) applied to a wire (e.g., 810), the enhancement-typesemiconductor regions proximate to the wire (e.g., 810) aresubstantially conductive. The enhancement-type semiconductor regionbecomes more conductive the greater the negative potential applied tothe wire 810. In an embodiment of the invention, the voltage V ismeasured with reference to the potential of the corresponding structure806 (e.g., voltage V is measured between wire 810F and dopedsemiconductor region 806F).

FIG. 9C is a cross-sectional diagram of the system 800 shown in FIG. 8taken along line 9C-9C in an embodiment where the structures 806 areenhancement-type semiconductor regions. The structure 806F includes aportion 830 comprising an enhancement-type semiconductor and a portion832 that is conductive. The wire 810F of the wire device 804F has awidth W_(W) larger than the width W_(E) of the enhancement-typesemiconductor portion in the embodiment shown in FIG. 9C. The largerwidth W_(W) of the wire 810F encompasses the enhancement-typesemiconductor portion 830 so all of the enhancement-type semiconductorportion 830 becomes substantially conductive when a negative voltage(V<0) is applied to the wire 810F.

There is shown in FIG. 10 a system 1000 including a plurality of dopeddepletion-type semiconductor regions 1006A-H according to an embodimentof the invention. A plurality of wire devices 1004A-H include at leastone wire 1010. The wires 1010A-H extend through their respective wiredevices 1004A-H to at least one position in proximity to (e.g., withinthe wire device, substantially flush with the surface of the wiredevice, through the surface of the respective wire device) the surfaceof the respective wire device. The wires 1010A-H may span and may becoupled to one or more of the doped semiconductor regions 1006A-H.

The function of the system 1000 in FIG. 10 is similar to the system 800shown in FIG. 8, but its structure differs. The output signals X0-7 forthe system 1000 in FIG. 10 are shown in Table 1 above for combinationsof the control signals A0-2 where an output signal having a value of “I”indicates that the respective doped semiconductor region is conductiveand the input signal I is transmitted to the corresponding output X0-7.However, the system 1000 includes two additional wire devices 1004G and1004H as compared to the system 800 in FIG. 8. Four wire devices 1004E-Hare driven by the control signal A0 (and A0 ) rather than two devices asin system 800. Additional wire devices are used to increase the distanceD10 shown in FIG. 10, which is greater than the distance D8 shown inFIG. 8, between positions where the wires 1010 in the wire devices 1004extend through the wire device 1004 to positions in proximity to theirrespective surfaces.

Some manufacturing methods become more complex as structures arepositioned close to each other. For example, it may be more difficult tomanufacture structures using photolithography if the structures havesub-wavelength features due to fringing caused by diffraction patterns.In the system 800 shown in FIG. 8, the wires 810E and 810F includestructures extending to positions in proximity to the surface which area distance D8 apart. In the system 1000, the function of wires 810E-F inFIG. 8 are performed by wire devices 1004E-H and wires 1010E-H. Thenumber of wires and wire structures is increased compared to the system800 shown in FIG. 8. However, the distance D10 in FIG. 10 betweenstructures formed in the wire devices 1004E-H is greater than thedistance D8 in FIG. 8 between structures formed in the wire devices804E-F, thus reducing manufacturing complexity and/or allowing theregions 1006 to be positioned closer together than would be possibleunder the system 800 shown in FIG. 8.

The wire devices 804, 1004 in FIGS. 8 and 10 are only shown in a singleposition such that their respective wires 810, 1010 are in alignmentwith selected structures 806, 1006 on the first devices 802, 1002.Embodiments of the invention encompass actuating the wire devices 804,1004 as illustrated by the arrows in FIGS. 8 and 10 to align theirrespective wires 810, 1010 with selected structures 806, 1006 on thefirst devices 802, 1002. In an embodiment of the invention, the wiredevices are actuated to positions where their respective wires 810, 1010are aligned with selected structures 806, 1006 on the first devices 802,1002 and the first and second devices 802, 1002, 804, 1004 are bondedtogether in aligned positions.

There is shown in FIG. 11 a block diagram of a system 1100 according toan embodiment of the invention including a first device 1102 and asecond device 1104. Each device 1102, 1104 includes one or more wires orother structures (not shown) such as described with reference to thefirst and second devices of FIGS. 1-10. A controller 1114 receives acommand signal 1120 indicating to align (or misalign) structures on thefirst and second devices. In response to the command signal 1120, thecontroller 1114 controls an actuator 1108 to displace one or both of thedevices 1102, 1104 to align (or misalign) the structures on the devices1102, 1104 in response to position information received from a positionsensor 1106. In an embodiment of the invention, the command signal 1120may be generated by a processor (not shown) that controls the alignmentor misalignment of structures on the first and second devices. Thecontroller 1114 includes a processor 1118 that receives and processesthe position information from the sensor 1106 to generate a controlsignal 1112 transmitted to the actuator 1108 to control the actuator1108 to displace one or both of the devices 1102, 1104 in response tothe position information received from the position sensor 1106 and thecommand signal 1120. Although the controller 1114, position sensor 1106,and actuator 1108 are illustrated as being separate from the devices1102, 1104, embodiments encompass one or more of the controller 1114,position sensor 1106, and actuator 1108 being formed on one or both ofthe devices 1102, 1104.

In an embodiment of the invention, the position sensor 1106 indicatesrelative position of the first and second devices based on the couplingof a signal (e.g., via direct contact or via capacitive coupling) from awire on one device to a wire on the other device. The level of couplingmay be detected with a current sensor, for example, by grounding thewires in the first device, coupling the wire in the second device to asignal source (e.g., a voltage source), and sensing the current throughone of the wires. As the wire in the first device passes a wire in thesecond device, a peak in current will be detected, indicating alignmentof the wires. Similarly, the low points in the current may be detectedto identify positions where the wires are not aligned and positionswhere the wires are de-coupled. The alignment of a wire with a regionsuch as in FIGS. 8-10 may also be sensed by measuring the current flow(or lack thereof) through a region 806, 1006 as the devices are actuatedrelative to each other.

The sensor 1106 is shown as connected to the first and second devices1102, 1104 in phantom because embodiments of the invention encompass theposition sensor detecting position based on information from the firstdevice 1102, the second device 1104, or from both the first and seconddevices 1102, 1104. In the embodiment described above, the currentsensor may be coupled to wires on either the first or second devices1102, 1104 to detect the level of coupling between wires on the firstand second devices 1102, 1104.

Embodiments of the invention encompass sensing alignment or misalignmentof wires on the first and second devices 1102, 1104 without sensingcoupling of signals between the wires on the different devices 1102,1104. For example, according to an embodiment of the invention, a system1200 as shown in FIGS. 12A-B uses capacitive coupling between structuresother than the wires on the devices 1202, 1204 to determine theiralignment. The system 1200 includes a first device 1202 an a seconddevice 1204. The first device includes a wire 1206 and the second device1204 includes a wire 1210. The first and second plates 1212, 1214,connected to the first and second devices 1202, 1204, respectively, areused to determine the level of alignment between the wires 1206, 1210.

The first and second plates 1212, 1214 are coupled to a position sensor1106 (not shown in FIG. 12) that determines the capacitive couplingbetween the plates 1212, 1214. The capacitance is at a peak when theplates 1212, 1214 are aligned and decreases as the plates 1212, 1214move further apart. As illustrated in FIGS. 12A and 12B, the plates1212, 1214 are each substantially the same distance D12 apart fromrespective wires 1206, 1210. Therefore, alignment of the plates 1212,1214 results in alignment of the wires 1206, 1210. When the wire 1210 isnot aligned with the wire 1206 as shown in FIG. 12A, the capacitivecoupling between the plates 1212, 1214 is not at a peak and the plates1212, 1214 are not aligned. When the wire 1210 is aligned with the wire1206 as shown in FIG. 12B, the capacitive coupling a between the plates1212, 1214 is at a peak because the plates 1212, 1214 are aligned.

When a command signal 1120 indicating to align the wires 1206, 1210 isreceived by the controller 1114, the processor 1118 generates controlsignals 1112 to control the actuator to displace one or both of thedevices 1202, 1204 until the position sensor 1106 indicates that thecapacitance between the plates 1212, 1214 is at a maximum or that isexceeds a threshold value. Similarly, when a command signal 1120indicating to misalign the wires is received by the controller 1114, theprocessor 1118 generates control signals 1112 to control the actuator todisplace one or both of the devices 1202, 1204 until the position sensor1106 indicates that the capacitance between the plates 1212, 1214 is ata minimum or that is below a threshold value. Although the operation ofthe system 1100 is describe above with reference to FIG. 12 and thealignment (or misalignment) of wires 1206, 1210, embodiments of theinvention encompass alignment of other structures, including mechanicalstructures.

There is shown in FIG. 13 a flow chart 1300 illustrating a methodaccording to an embodiment of the invention that is described withreference to the system 1100 in FIG. 11. A command signal 1120 isreceived in step 1302 indicating to align structures on the first andsecond devices 1102, 1104. At least one of the first and second devices1102, 1104 is displaced relative to the other in step 1304 in responseto the command signal 1120. A position information signal 1110 isreceived in step 1306 indicating whether the structures on the first andsecond devices are aligned.

As described above, the position information signal 1110 may begenerated, for example, based on the coupling of signals between wireson the first and second devices or based on the alignment of otherstructures such as the plates shown in FIGS. 12A and 12B. For example,the level of coupling may be compared to a threshold level of coupling(e.g., capacitance with regard to FIGS. 12A and 12B). As one or both ofthe devices are actuated relative to each other, when the level ofcoupling meets the threshold, the structures are determined to bealigned (as shown in FIG. 12B). If the structures are aligned, asdetermined in step 1308, the controller 1114 controls the actuator 1108to stop the displacement of the device(s) in step 1312. If it wasdetermined in step 1308 that the structures are not aligned, thecontroller 1114 generates a control signal 1112 for the actuator 1108 tocontinue displacing the device(s) as indicated by step 1310 andreceiving the position information signal 1110 indicating whether thewires are aligned in step 1306.

In an embodiment of the invention, the method 1300 includes a furtherstep 1314 as shown in phantom in FIG. 13. Once the structures arealigned, a force may be applied to at least one of the devices in adirection of the other device in step 1314. This force can bring thedevices closer together to either connect the structures or to enhancethe connection (or coupling) between the structures. In an embodiment ofthe invention, the method 1300 includes yet another step 1316 as shownin phantom. The first and second devices are bonded or coupled to eachother in step 1316. Embodiments of the invention encompass bonding thefirst and second devices to each other via fusion bonding, solder (oreutectic) bonding or anodic bonding. Embodiments of the invention alsoencompass bonding the first and second devices to each other using anadhesive, such as an epoxy, applied to at least one of the devices tofixably connect the devices when the applied force brings them together.

There is shown in FIG. 14 a flow chart 1400 illustrating another methodaccording to an embodiment of the invention that is described withreference to the system 1100 in FIG. 11. The method of FIG. 14 includesan initialization procedure and an alignment procedure. During theinitialization procedure, the system 1100 identifies positions where thewires in the first and second devices 1102, 1104 are aligned and storescorresponding position information in a memory 1116. In the alignmentprocedure, the stored position information is used to control theactuator 1108 to displace the device(s) 1102, 1104 to align thestructures on the first and second devices 1102, 1104 in response to acommand signal 1120.

In the initialization procedure, at least one of the first and seconddevices is displaced relative to the other device in step 1402. Aposition information signal 1110 is received indicating the relativepositions of (or the alignment of) the structures on the first andsecond devices 1102, 1104 in step 1404. If the structures are determinedto be aligned (or misaligned depending on the command signal) in step1408, the position information identifying the position of the displaceddevice(s) is stored in memory 1116 in step 1410. In an embodiment of theinvention, the controller stores position information from the sensor1106 corresponding to one or more positions of the second device 1104.The controller 1114 can then control the actuator 1108 to displace thesecond device 1104 in response to the stored position information.

In an embodiment of the invention, the devices are actuated relative toeach other using an electrostatic actuator. When a peak (or threshold)level of coupling or alignment between structures (e.g., a pair ofwires) is detected, a memory record identifying the structures (e.g.,the pair of wires) and the position of the devices is stored in thememory 1116. In an embodiment of the invention, the position of thedevices (position information) is stored in the memory in the form ofinformation for controlling the actuator 1108 to displace the devices1102, 1104 into position where the peak (or threshold) level of couplingor alignment was detected. For an electrostatic actuator, for example,the position information may include activation and/or deactivationsequences for driving the electrodes of the of actuator.

If the structures are determined not to be aligned in step 1408, thedevice(s) is further displaced until the structures are aligned. Aftereach position is stored, if there are further positions to identify asdetermined in step 1412, the device(s) is further displaced in step 1402and the initialization procedure is repeated for each position to beidentified.

In an embodiment of the invention, the initialization procedure isperformed by moving one of the devices 1102, 1104 relative to the otherin small increments. The devices are forced together via a clampingmechanism at each increment. At each increment, the level of couplingbetween the structures on the respective devices is determined andposition information corresponding to the positions with the peak levelof coupling are stored in the memory 1116.

Once the positions are identified, the alignment procedure begins byreceiving a command signal 1120 in step 1414 indicating which structuresto couple to each other. The system reads the position information fromthe memory 1116 corresponding to the structures indicated in the commandsignal 1120 in step 1416. The controller 1114 outputs a control signal1112 to the actuator in response to the stored position information tocontrol the actuator 1108 to position the device 1104 for alignment ofthe structures on the devices in step 1418. Different structures maythen be aligned by receiving another command signal 1120 as indicated byarrow 1420.

There is shown in FIG. 15 a system 1500 including a plurality of devices1502, 1504 according to an embodiment of the invention. The devices1502, 1504 are each coupled to a respective substrate 1512, 1514. Thefirst substrate 1512 includes a plurality of devices 1502 that eachcorresponds to one of the devices 1504 on the second substrate 1514. Thefirst and second substrate 1512, 1514 are brought together to couple (bycontact or otherwise) the respective pairs of devices 1502, 1504together.

A cross-sectional view of the system 1500 taken along lines 16-16 isshown in FIG. 16A. As shown in FIG. 16A, the first and second substrates1512, 1514 and their respective devices 1502, 1504 are not in alignment.The substrates 1512, 1514 are aligned as shown in FIG. 16B and are thenbrought together as shown in FIG. 16C. As illustrated in FIG. 16C,although the substrates 1512, 1514 are aligned when they are broughttogether, the devices 1502 on the first substrate 1512 are notnecessarily aligned with corresponding devices 1504 on the secondsubstrate 1514. Some devices 1502A, 1504A are aligned while otherdevices 1502B, 1504B are not aligned.

The misalignment may result from manufacturing tolerances that cause thedevices 1502, 1504 to be inaccurately positioned on their respectivesubstrates. In an embodiment of the invention, the substrates 1512, 1514are semiconductor wafers and the devices 1502, 1504 are dies formed onthe wafers 1512, 1514. The position or alignment of a die 1502, 1504 ona substrate 1512, 1514 may be imprecise as a result of stepper run-out,drift, or other aberrations resulting from tolerances in themanufacturing process. Thermal expansion may also cause imprecision ifthere are differences in temperature between the fabrication and bonding(or coupling) processes.

In an embodiment of the invention as shown in FIG. 17, one or both ofthe devices 1702, 1704 may be flexibly coupled to its respectivesubstrate 1712, 1714 and aligned before bonding to its correspondingdevice 1702, 1704. There is shown in FIG. 17 a system 1700 including aplurality of devices 1702A-D that are each flexibly coupled to asubstrate 1712 by flexible connectors 1722. The other substrate 1714 hassome devices 1704A, C, D that are fixably coupled to the substrate 1714and another device 1704B that is flexibly coupled to the substrate 1714by flexible connectors 1724.

In an embodiment of the invention, the flexible connectors 1722, 1724are formed by patterning a spring or a spring-like structure 1722, 1724between the substrates 1712, 1714 and the devices 1702, 1704. In anembodiment of the invention conductors are patterned within or on theflexible connectors 1722, 1724 to conduct signals between the substrates1712, 1714 and the devices 1702, 1704. Although the devices 1702, 1704are shown in FIG. 17 with four flexible connectors 1722, 1744 to thesubstrates 1712, 1714, embodiments of the invention encompass using oneor more flexible connectors to flexibly couple the devices 1702, 1704 tothe substrates 1712, 1714.

There is shown in FIGS. 18A-D cross-sectional diagrams of the system1700 taken along line 18-18 in FIG. 17. The system 1700 is illustratedin each of FIGS. 18A-D in a different stage of a process of bonding thedevices 1702 from one substrate 1712 to corresponding devices 1704 fromanother substrate 1714. In FIG. 18A, the substrates 1712, 1714 are shownin position where they have been aligned. In FIG. 18B, the substrateshave been brought together although their respective devices 1702, 1704are shown as being out of alignment.

The misalignment of the devices 1702, 1704 may be corrected in thesystem 1700 because at least one of the devices 1702, 1704 of each pairof devices is flexibly coupled to its respective substrate 1712, 1714.In FIG. 18C, the devices 1702, 1704 have been aligned. In particular,1702A can be moved to the left and into alignment with device 1704Awhich is fixed to its respective substrate 1714. Devices 1702B and 1704Bcan both be flexibly coupled to their respective substrates 1712, 1714and either or both substrates may be actuated relative to its substrateto put it in alignment with the other device 1702B, 1704B. In thisparticular embodiment, device 1704B is actuated to the left as seen inthe drawing to a position in alignment with device 1702B.

In an embodiment of the invention, the devices 1702, 1704 are positionedwith respect to their substrates such that when the substrates 1712,1714 are brought together, the devices 1702 from one substrate 1712 arenot in contact with the devices 1704 from the other substrate 1714. InFIG. 18C, although the substrates 1712, 1714 are brought together, theirrespective devices 1702, 1704 are still apart. In an embodiment of theinvention and as illustrated in FIG. 18D, after the devices 1702, 1704are aligned, the devices 1702, 1704 are brought together. As discussedabove, the devices 1702, 1704 may be brought together to couplestructures on corresponding devices either temporarily so they can laterbe actuated to another position or the devices 1702, 1704 may be broughttogether and bonded permanently.

In an embodiment of the invention, the devices are actuatedelectrostatically. There is shown in FIG. 19 a system 1900 including afirst device 1902 flexibly coupled with flexible connectors 1930 to afirst substrate 1912 and a second device 1904 fixably coupled to asecond substrate 1914. The system 1900 includes a first actuator 1920for actuating the first device 1902 in a first direction Y and a secondactuator 1922 for actuating the first device 1902 in a second directionX. In an embodiment of the invention, the first and second actuators1920, 1922 are comb drives.

The system 1900 also can include a pair of substantially parallel plates1924, 1926 for actuating the devices in a Z direction to bring thedevices together after the substrates 1912, 1914 are coupled. Whenopposite potentials are applied to each of the plates 1924, 1926, theplates are attracted together and pull their respective devices 1902,1904 together.

There is shown in FIG. 20 a system 2000 including a first device 2002flexibly coupled to a first substrate 2012 by connectors 2030 and asecond device 2004 flexibly coupled to a second substrate 2014 byconnectors 2032. The system 2000 includes a first actuator 2020 havingelectrodes 2020 a on the first device 2002 and electrodes 2020 b on thesecond device 2004 for actuating the first and second devices 2002, 2004in a first direction X relative to each other. The second actuator 2022has electrodes 2022 a on the first device 2002 and electrodes 2022 b onthe second device 2004 for actuating the first and second devices 2002,2004 in a second direction Y relative to each other.

In an embodiment of the invention, the first and second actuators 2020,2022 electrostatically actuate the first and second devices 2002, 2004.In an embodiment of the invention, the devices 2002, 2004 form amicroelectromechanical system (MEMS) that is electrostatically actuated.In an embodiment of the invention, the actuator is anelectrostatically-translatable surface drive as described in by Hoen etal., A High-Performance Dipole Surface Drive for Large Travel and Force,The 12th International Conference on Solid State Sensors, Actuators andMicrosystems, Jun. 8-12, 2003, 344-347, or described in U.S. Pat. No.5,986,381, which are incorporated herein by reference. In an embodimentof the invention, the devices 2002, 2004 are actuated with a precisionof one nanometer or better relative to each other. In an embodiment ofthe invention, the devices 2002, 2004 are actuated with a precision ofone hundred nanometers or better relative to each other.

A cross-sectional diagram of a portion of an exemplary system 2000 takenalong line 21-21 is shown in FIG. 21. The system 2000 includes astructure 2106 formed on the surface 2110 of the first device 2002 and astructure 2116 formed within the second device 2004. A plurality oftranslator electrodes 2020 b are coupled to the second device 2004 and aplurality of stator electrodes 2020 a are coupled to the first device2002. The translator and stator electrodes 2020 form the surface drivethat actuates the devices 2002, 2004 in the X direction relative to eachother when the electrodes 2020 are activated and/or deactivated in theappropriate sequences. The electrodes 2020 are controlled via a controlsignal received via the flexible conductors 2040, 2042. In an embodimentof the invention, the flexible conductors 2040, 2042 are incorporatedinto the flexible connectors 2030, 2032.

In an embodiment of the invention, one or both of the actuators 2020,2022 also apply a force to the devices 2002, 2004 to bring them togetherand actuate the devices 2002, 2004 in the Z direction. With reference toFIGS. 18B-D, the electrodes 2020, 2022 are activated and/or deactivatedin the appropriate sequences to move the devices 2002, 2004 from theirpositions in FIG. 18B to their positions in FIG. 18C. Once aligned asshown in FIG. 18C, the electrodes 2020, 2022 on the first and seconddevices 2002, 2004 that actuated the devices in the X and Y directionsare then given an increase in potential to actuate the devices in the Zdirection to bring the devices 2002, 2004 together as shown in FIG. 18D.

In an embodiment of the invention, voltages below a first voltage levelare applied to the electrodes 2020, 2022 to activate/deactivate theelectrodes 2020, 2022 to actuate the devices 2002, 2004 in the X and Ydirections. The electrodes 2020, 2022 are then activated with voltagesabove the first voltage level to actuate the devices 2002, 2004 in the Zdirection. In an embodiment of the invention, the force applied byapplying the voltages above the first level brings the first and seconddevices 2002, 2004 together such that their respective electrodes 2020,2022 are coupled to each other and the pressure or the current flowbetween the electrodes causes the electrodes 2020 a, 2022 a from thefirst device 2002 to fuse to the electrodes 2020 b, 2022 b of the seconddevice 2004, thereby coupling the first device 2002 to the second device2004.

In a system where the position of the structures is determinative, thatis the position of the structures is known based on a command given toan actuator, multiple structures on the devices may be aligned withoutthe initialization procedure described above with reference to FIG. 14.In other words, the position of the structures is known based on thecommand signal transmitted to the actuator(s) to position the devices.In such a system, structures on the devices may be aligned without aposition sensor 1106 (shown in phantom in FIG. 11). For example, whenthe positions of the electrodes 2020, 2022 (in FIGS. 20, 21) of thesystem 2000 shown in FIG. 20 are known relative to the position of thestructures 2106, 2116 of the first and second devices 2002, 2004, theelectrodes may be activated/deactivated in predetermined sequences toalign (or misalign) certain structures on the first and second devices2002, 2004.

There is shown in FIG. 22 a flow chart 2200 illustrating a methodaccording to an embodiment of the invention for aligning wires in asystem where the position of the structures is determinative. Withreference to the system 1100 in FIG. 11, the system receives a signal1120 identifying structures to be aligned in step 2202. The controller1114 generates a control signal 1112 to an actuator in step 2204 toposition the devices to align the identified structures. The firstdevice and the second device may or may not (as illustrated in phantombox) be bonded or coupled to each other in step 2206.

The term “wire” as used herein refers to any substantiallyelectrically-conducting material. In an embodiment of the invention, oneor more of the wires are formed of a metal. In another embodiment of theinvention, one or more of the wires are formed of a semiconductormaterial which, through doping or an applied electric field or acombination thereof, is substantially electrically conductive. A wiremay be patterned, for example, using optical, x-ray, or imprintlithography techniques and may be fabricated using semiconductorprocessing techniques such as material deposition and etching.

Although embodiments of the invention are described above as having asecond device that is displaceable relative to the first device,embodiments of the invention encompass having a first devicedisplaceable relative to the second device or both first and seconddevices displaceable relative to each other.

The foregoing describes the invention in terms of embodiments foreseenby the inventors for which an enabling description was available,although insubstantial modifications of the invention, not presentlyforeseen may nonetheless represent equivalents thereto.

1-31. (canceled)
 32. A method of substantially electrically coupling amicrometer-scale or smaller geometry doped semiconductor region to amicrometer-scale or smaller geometry wire in a system wherein a firstdevice has a surface and includes the doped semiconductor regionextending along its surface, a second device has a surface opposite thesurface of the first device and includes the wire extending through thesecond device to a position in proximity to the surface of the seconddevice comprising: displacing the first and second devices relative toeach other; receiving a signal from a sensor indicating the relativeposition of wire and the doped semiconductor region; and determiningwhether the wire and the doped semiconductor region are aligned inresponse to the signal from the sensor.
 33. The method according toclaim 32 comprising determining whether the wire and the dopedsemiconductor region are aligned by sensing current flow through thedoped semiconductor region.
 34. The method according to claim 32comprising electrostatically displacing one of the first and seconddevices relative to the other device.
 35. The method according to claim32 comprising stopping the displacement of the one of the first andsecond devices if the wire and the doped semiconductor region arealigned and continuing the displacement if the wire and the dopedsemiconductor region are not aligned.
 36. The method according to claim32 comprising applying an attractive force between the first and seconddevices.
 37. The method according to claim 32 comprising storingposition information in a memory.
 38. A method of substantiallyelectrically coupling a micrometer-scale or smaller geometry wire to oneof a plurality of micrometer-scale or smaller geometry dopedsemiconductor regions in a system wherein a first device has a surfaceand includes the plurality of doped semiconductor regions extendingalong its surface, a second device has a surface opposite the surface ofthe first device and includes the wire extending through the seconddevice to a position in proximity to the surface of the second devicecomprising: receiving a signal identifying one of the dopedsemiconductor regions; reading position information from memorycorresponding to the identified doped semiconductor region; anddisplacing one of the first and second devices in response to theposition information.
 39. The method according to claim 38 comprisingapplying an attractive force between the first and second devices. 40.The method according to claim 38 comprising electrostatically displacingone of the first and second devices relative to the other device. 41-47.(canceled)
 48. A method of activating one of a plurality ofmicrometer-scale or smaller geometry doped semiconductor regions along asurface of a first device comprising: receiving a command signalidentifying the one of the plurality of doped semiconductor regions;generating a control signal in response to the command signal; actuatinga second device relative to the first device in response to the controlsignal to align a conductor on the second device with the identifieddoped semiconductor region.
 49. The method according to claim 48comprising reading position information from a memory in response to thecommand signal and generating the control signal in response to theposition information.
 50. The method according to claim 48 comprisingcoupling the first and second devices. 51-52. (canceled)
 53. The methodof claim 31, further comprising: in response to determining the wire andthe doped semiconductor region are aligned, applying a force to at leastone of the wire and the doped semiconductor region bringing the wire andthe doped semiconductor region closer together to either connect thefirst and second devices or enhance coupling between the first andsecond devices.
 54. The method of claim 53, further comprising: bondingthe first and second devices together.
 55. The method of claim 31further comprising: in response to determining the first and seconddevices wire and the doped semiconductor region are not aligned, movingthe wire and the doped semiconductor region in small increments untilthe wire and the doped semiconductor region are aligned; and storing aposition of the wire and the doped semiconductor region when the wireand the doped semiconductor region are aligned.
 56. The method of claim38, further comprising: in response to determining the first and seconddevices are aligned, applying a force to at least one of the first andsecond devices bringing the first and second devices closer together toeither connect or enhance coupling between the first and second devices.57. The method of claim 56, further comprising: bonding the first andsecond devices together.
 58. The method of claim 48, further comprising:in response to determining the conductor on the second device and thedoped semiconductor region on the first device are aligned, applying aforce to at least one of the first and second devices bringing the firstand second devices closer together to either connect or enhance couplingbetween the first and second devices.
 59. The method of claim 58,further comprising: bonding the first and second devices together.